دنیای میکروسکوپی برق
تصویر کانفوکال از دستگاه حسگر(CCD) ،مضاهده ی مستقیم سطح،1000x
TFT computer screen with covers removed to reveal transistors
(150x)Surface of electronic chip
(10x)Electronic chip surface
(10x)Epi, DIC, Brightfield
Micropillar with Pt Bridges
A micropillar is provided with lateral contacts in order to generate an in-plane electrical field inside the cavity. The contacts are formed by focused ion beam induced deposition of platinum between a gold layer and the micropillar. The image was colorized (Pt: blue, Au: yellow, micropillar: red).
Courtesy of Johannes Beetz
Image Details
Instrument used: Helios NanoLab Family
Magnification: 5000
Voltage: 3 kV
Working Distance: 4.2
Detector: SE
Micropillar with Pt Bridges (Image 2)
A micropillar is provided with lateral contacts in order to generate an in-plane electrical field inside the cavity. The contacts are formed by focused ion beam induced deposition of platinum between a gold layer and the micropillar. The image was colorized (Pt: blue, Au: yellow, micropillar: red).
Courtesy of Johannes Beetz
Image Details
Instrument used: Helios NanoLab Family
Magnification: 5000
Voltage: 15 kV
Working Distance: 4.2
Detector: SE
Electrostatic Discharge damages on a MOS transistor Gate
These Silicon filaments are the consequence of an ESD (Electrostatic Discharge) stress applied on a MOS Polysilicon Gate. By creating a Gate leakage, they are responsible of the electronic component failure.
Courtesy of Julien Goxe
Image Details
Instrument used: Nova NanoSEM Family
Magnification: 192000 X
Horizontal Field Width: 1.55 µm
Voltage: 10 kV
Spot: 3.0
Working Distance: 4.9
Detector: SE TLD
On the process side of things, a SEM cross section reveals the contacted gate pitch and metal gates consistent with Samsung’s 32 nm HKMG process.
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The STMicroelectronics L3G4200D is another MEMS device in the iPhone 4s that was previously found in the iPad 2 as well. Additionally, this device was catalogued in the iPhone 4. The L3G4200D is a low-power three-axis angular rate sensor able to provide unprecedented stability of zero rate level and sensitivity over temperature and time (www.st.com).
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